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PURPOSE AND SCOPE
The semiconductor resonator with electronic control is designed for the use in the development of frequency selective devices
MAIN CHARACTERISTICS, ESENCE OF THE DEVELOPMENT
The device is based on the dependence of the amplitude and phase frequency characteristics of the semiconductor resonant p - i - n structure on the direct current that is passed through it. It allows to implement the smooth control of the resonant frequency and phase shift of such a structure.
Operating frequency range: from 60 to 70 GHz.
The production of its q - factor at the resonant frequency: 2000 GHz.
Control circuit supply voltage: not more than 3 V.
Power consumption of the control circuit: not more than 0, 6 mW per section.
Control range phase shift for one section: 0 - 140 deg.
Resonance frequency tuning range: up to 2%
STATE OF INTELLECTUAL PROPERTY PROTECTION
Received a patent of Ukraine
The demand is due to the need to the need to develop devices millimeter wavelength range for various purposes. It is important that the process of their production can be based on the existing planar technology. It creates a fundamental possibility of resonant elements integration, transmission lines, as well as active and passive components on a single crystal
THE DEVELOPMENT READINESS STATUS
The research work was carried out. The experimental samples are made and investigated