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PURPOSE AND SCOPE
An ion - plasma processing of micro - and nanostructures "Titan - 2" compact reactor is intended for reactive plasma processing of micro - and nanostructures in microelectronics, the deposition of thin films and basic research in physics of gas discharge. The results of the work can be implemented in scientific organizations of physical and technical profile and directly at the enterprises that make modern science - intensive products.
STATE OF INTELLECTUAL PROPERTY PROTECTION
There was received a patent of Ukraine.
Development is in demand in the market of Ukraine, Russia, USA.
THE ESSENCE OF THE DEVELOPMENT
"Titan - 2" is a small low - power desktop installation with a high - frequency diode reactor. It has a distributed winding and pumping out of gas for processes of plasma - chemical etching with high homogeneity. The Titan - 2 provides generation of charged particles and chemically active radicals on the treated surface diameter 100 mm with inhomogeneity less than 2% . It has the ability to control the energy of ions in the range of 20 - 500 eV. Using the reactor "Titan - 2" silicon etching rate was achieved about 3 microns / min.
STATUS OF READINESS OF THE DEVELOPMENT
Nowadays the "Titan - 2" works successfully in Kharkiv National University named by V. N. Karazin.